However, a new report contradicts the 1GB of RAM claim for the next iPhone 6, suggesting the schematic in question actually refers to the design of a NAND flash component used as a storage chip, rather than system memory for the SoC.
9to5mac in a report cites a SoC memory engineer named Todd DeRego, who notes the schematic does not have sufficient signals to represent a DRAM interface.
DeRego also pointed out that the text reference AP_TO_NAND in the leaked schematics is actually meant to signify an application processor's link to NAND flash storage. Such a configuration, notes the report, can be used to store booting firmware.
The report separately highlights that the PN65V model number reference on another the leaked schematic is that of an NFC chip made by NXP Corporation. Notably, the fingerprint sensor on the iPhone 5s uses a chip from NXP Semiconductors.
Last month, new internal components from the Apple's next generation iPhone were leaked purportedly showing the 4.7-inch iPhone 6's logic board, which indicated support for near field communication (NFC).
Apple has been previously rumoured to debut NFC support on its devices, but we are yet to see the feature on any iPhone. The adoption of NFC could be seen as a move to include e-wallet features on the next iPhone model, especially since Apple is rumoured to launch its own mobile wallet service.
On Monday, we were also treated with a leaked image that tipped Apple's next Lightning cable would have reversible USB ports of a different type than the upcoming reversible USB Type-C connectors.
Additionally, there were also some leaked images that suggested the battery sizes of the alleged 4.7-inch and 5.5-inch iPhone 6 models to be 1810mAh and 2915mAh. The report also claimed that the alleged 5.5-inch iPhone 6, previously said expected to be released as the iPhone Air, will instead be called the iPhone 6L.
Recently, multiple reports suggested that Apple will unveil the iPhone 6 on September 9.
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